Origin of Antimony Segregation inGaInSb/InAsStrained-Layer Superlattices
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.85.4562/fulltext
Reference27 articles.
1. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
2. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
3. Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy
4. Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope
5. Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices: An examination of interface disorder
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