Gate tuning of fractional quantum Hall states in an InAs two-dimensional electron gas
Author:
Funder
Tohoku University
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.105.075305/fulltext
Reference28 articles.
1. Exotic non-Abelian anyons from conventional fractional quantum Hall states
2. Exotic circuit elements from zero-modes in hybrid superconductor–quantum-Hall systems
3. Universal Topological Quantum Computation from a Superconductor-Abelian Quantum Hall Heterostructure
4. Quantized conductance doubling and hard gap in a two-dimensional semiconductor–superconductor heterostructure
5. Limits to mobility in InAs quantum wells with nearly lattice-matched barriers
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1. High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells;Applied Physics Letters;2024-05-27
2. In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells;APL Materials;2024-05-01
3. Impact of in situ controlled disorder screening on fractional quantum Hall effects and composite fermion transport;Physical Review B;2022-08-10
4. Features of the bound state formation near a nonlinear defect in the presence of a homogeneous external field;The European Physical Journal Plus;2022-07
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