Tunneling Ionization of AutolocalizedDX−Centers in Terahertz Fields
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.75.1590/fulltext
Reference20 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour
3. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
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