Direct observation of Ge and Si ordering at the Si/B/GexSi1−x(111) interface by anomalous x-ray diffraction
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.69.2236/fulltext
Reference17 articles.
1. Surface doping and stabilization of Si(111) with boron
2. Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction
3. Structure of (√3×√3) R 30°‐B at the Si interface studied by grazing incidence x‐ray diffraction
4. Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping
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