Structural Transformations and Defect Production in Ion Implanted Silicon: A Molecular Dynamics Simulation Study
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.74.2507/fulltext
Reference18 articles.
1. Point defects and dopant diffusion in silicon
2. Mechanisms of amorphization in ion implanted crystalline silicon
3. New model for damage accumulation in Si during self‐ion irradiation
4. Defects production and annealing in self‐implanted Si
5. Comparison of MC and MD calculations of slowing down of ions with low energies
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