Spectroscopic ellipsometry ofE1-like transitions in nanometer-thickness Ge layers
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.64.315/fulltext
Reference22 articles.
1. Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers
2. Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates
3. New optical structure near theEtransitions of InSb/InAlSb quantum wells
4. Application of spectroscopic ellipsometry to complex samples
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2. Spectro-ellipsometric modeling and optimization of two-dimensional Ge layer and three-dimensional Ge dot/island structures on SiO2 substrates;Japanese Journal of Applied Physics;2021-01-01
3. Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys;Journal of Applied Physics;2014-08-07
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