Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon-Reference-Cited by-同舟云学术

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Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon

Published:2011-01-18 Issue:3 Volume:106 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Dreher L.,Hilker T. A.,Brandlmaier A.,Goennenwein S. T. B.,Huebl H.,Stutzmann M.,Brandt M. S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.106.037601/fulltext

Reference27 articles.

1. A silicon-based nuclear spin quantum computer

2. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

3. Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach

4. Solid-state quantum memory using the 31P nuclear spin

5. Electron spin relaxation times of phosphorus donors in silicon

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1. An electrically driven single-atom “flip-flop” qubit;Science Advances;2023-02-10

2. Engineering local strain for single-atom nuclear acoustic resonance in silicon;Applied Physics Letters;2021-10-25

3. Calculating the hyperfine tensors for group-IV impurity-vacancy centers in diamond using hybrid density functional theory;Physical Review B;2021-08-30

4. Recent progress in atomistic modelling and simulations of donor spin qubits in silicon;Computational Materials Science;2021-06

5. Quantum guidelines for solid-state spin defects;Nature Reviews Materials;2021-04-26

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