Engineering local strain for single-atom nuclear acoustic resonance in silicon
Author:
Affiliation:
1. School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, New South Wales 2052, Australia
2. Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87123, USA
Funder
Australian Research Council
Army Research Office
Australian Department of Industry, Innovation and Science
National Quanutm Information Science Research Center
Sandia National Laboratories
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0069305
Reference62 articles.
1. Uniaxial-process-induced strained-Si: extending the CMOS roadmap
2. High-mobility Si and Ge structures
3. Spins in few-electron quantum dots
4. Silicon quantum electronics
5. Semiconductor qubits in practice
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