Determination of Formation and Ionization Energies of Charged Defects in Two-Dimensional Materials-Reference-Cited by-同舟云学术

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Determination of Formation and Ionization Energies of Charged Defects in Two-Dimensional Materials

Published:2015-05-12 Issue:19 Volume:114 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Wang Dan,Han Dong,Li Xian-Bin,Xie Sheng-Yi,Chen Nian-Ke,Tian Wei Quan,West Damien,Sun Hong-Bo,Zhang S. B.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

U.S. Department of Energy

Jilin University

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.114.196801/fulltext

Reference40 articles.

1. The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Graphene-Like Two-Dimensional Materials

4. The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes

5. Structure, stability and defects of single layer hexagonal BN in comparison to graphene

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