Structure, stability and defects of single layer hexagonal BN in comparison to graphene
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/25/i=4/a=045009/pdf
Reference38 articles.
1. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
2. Boron Nitride Nanotubes and Nanosheets
3. Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices
4. Boron nitride substrates for high-quality graphene electronics
5. Formation of defects in boron nitride by low energy ion bombardment
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