Proton Diffusion Mechanism in AmorphousSiO2
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.97.155901/fulltext
Reference31 articles.
1. An experimental comparison of measurement techniques to extract Si-SiO2 interface trap density
2. Undetectability of the point defect as an interface state in thermal
3. Reactions of hydrogen with Si-SiO/sub 2/ interfaces
4. The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO2 interface
5. Positive charging of thermal SiO2 layers: hole trapping versus proton trapping
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