Phase Manipulation betweenc(4×2)andp(2×2)on the Si(100) Surface at 4.2 K
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.91.146103/fulltext
Reference24 articles.
1. Phase transition of the Si(001) surface below 100 K
2. Anomalous flipping motions of buckled dimers on the Si(001) surface at 5 K
3. Phase Transition between $\mbi{c} \bf (4\times 2)$ and $\mbi{p}\bf (2\times 2)$ Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
4. p(2×2)Phase of Buckled Dimers of Si(100) Observed onn-Type Substrates below 40 K by Scanning Tunneling Microscopy
5. Precise Scanning Tunneling Microscopy Images of Si(100) Surface Dimers at 4.2 K
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