Ionic charge distributions in silicon atomic surface wires-Reference-Cited by-同舟云学术

Ionic charge distributions in silicon atomic surface wires

Published:2021 Issue:5 Volume:13 Page:3237-3245
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Croshaw Jeremiah¹²³⁴⁵^ORCID,Huff Taleana⁶⁷³⁴,Rashidi Mohammad¹²³⁴,Wood John¹²³⁴,Lloyd Erika¹²³⁴,Pitters Jason⁶⁷³⁴^ORCID,Wolkow Robert A.¹²³⁴⁵

Affiliation:

1. Department of Physics

2. University of Alberta

3. Edmonton

4. Canada

5. Quantum Silicon Inc.

6. Nanotechnology Research Centre

7. National Research Council Canada

Abstract

Using a non-contact atomic force microscope (nc-AFM), we examine continuous dangling bond (DB) wire structures patterned on the hydrogen terminated silicon (100)-2 × 1 surface.

Funder

Natural Sciences and Engineering Research Council of Canada

Alberta Innovates - Technology Futures

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR08295C

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