p(2×2)Phase of Buckled Dimers of Si(100) Observed onn-Type Substrates below 40 K by Scanning Tunneling Microscopy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.89.286104/fulltext
Reference19 articles.
1. Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy
2. Imaging chemical-bond formation with the scanning tunneling microscope:NH3dissociation on Si(001)
3. Direct observation of an increase in buckled dimers on Si(001) at low temperature
4. Low-temperature scanning-tunneling-microscopy observations of the Si(001) surface with a low surface-defect density
5. Origin of the symmetric dimers in the Si(100) surface
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