Initial Surface Roughening inGe/Si(001)Heteroepitaxy Driven by Step-Vacancy Line Interaction
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.91.176102/fulltext
Reference19 articles.
1. Layer-by-layer growth of germanium on Si(100): strain-induced morphology and the influence of surfactants
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. Transition States Between Pyramids and Domes During Ge/Si Island Growth
4. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)
5. Nucleationless Three-Dimensional Island Formation in Low-Misfit Heteroepitaxy
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1. Evolution of Ge wetting layers growing on smooth and rough Si (0 0 1) surfaces: Isolated {1 0 5} facets as a kinetic factor of stress relaxation;Applied Surface Science;2023-01
2. Evolution of Ge Wetting Layers Growing on Smooth and Rough Si (001) Surfaces: Isolated {105} Facets as a Kinetic Factor of Stress Relaxation;SSRN Electronic Journal;2022
3. Scanning Tunneling Microscopy in Surface Science;Springer Handbook of Microscopy;2019
4. Persistent monolayer-scale chemical ordering in Si1−xGex heteroepitaxial films during surface roughening and strain relaxation;Journal of Applied Physics;2015-12-28
5. Surface reconstruction at the initial Ge adsorption stage on Si(114)-2 × 1;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03
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