Direct proof of two-electron occupation of Ge-DXcenters in GaAs codoped with Ge and Te
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.71.3529/fulltext
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1. Shallow donors in magnetic fields in zinc-blende semiconductors. II. Magneto-optical study of InSb under hydrostatic pressure
2. Magneto-optical studies of n-GaAs under high hydrostatic pressure
3. On the existence of two non-equivalent lattice positions of donors in n-type InSb
4. Evidence from Transport Measurements at High Pressures for Donor Ions Occupying Non-Equivalent Lattice Positions in InSb
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