Resonant localized donor state above the conduction band minimum in InN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1977212
Reference10 articles.
1. Effects of electron concentration on the optical absorption edge of InN
2. Surface charge accumulation of InN films grown by molecular-beam epitaxy
3. MBE-growth, characterization and properties of InN and InGaN
4. Origin of electron accumulation at wurtzite InN surfaces
5. Intrinsic Electron Accumulation at Clean InN Surfaces
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