Mechanism of epitaxial growth of monolayer CaF on Si(111)-(7×7)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.1718/fulltext
Reference13 articles.
1. Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review
2. Structure of the Si(111)-CaF2Interface
3. Structure Analysis of the CaF2/Si(111) Interface in Its Initial Stage of Formation by Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)
4. CaF2/Si heteroepitaxy: Importance of stoichiometry, interface bonding, and lattice mismatch
5. Structural transitions of theCaF2/Si(111) interface
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1. Scanning tunneling microscopy study of CaF2 on Si(111): observation of metastable reconstructions;Journal of Physics D: Applied Physics;2021-11-23
2. Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data;Physical Review B;2018-03-15
3. Self-limited growth of the CaF nanowire on the Si(5 5 12)-2×1 template;Surface Science;2012-10
4. Growth dynamics of insulating SrF2films on Si(111);Journal of Physics: Condensed Matter;2007-10-18
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