CaF2/Si heteroepitaxy: Importance of stoichiometry, interface bonding, and lattice mismatch
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.5315/fulltext
Reference15 articles.
1. MBE‐grown fluoride films: A new class of epitaxial dielectrics
2. Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
3. Determination of Interface States for CaF2/Si(111) from Near-Edge X-Ray-Absorption Measurements
4. Photoemission study of bonding at theCaF2-on-Si(111) interface
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