Real time investigation of the effect of thermal expansion coefficient mismatch on film-substrate strain partitioning in Ag/Si systems-Reference-Cited by-同舟云学术

Real time investigation of the effect of thermal expansion coefficient mismatch on film-substrate strain partitioning in Ag/Si systems

Published:2016-10-07 Issue:13 Volume:120 Page:135301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Das Debolina¹,Banu Nasrin¹,Bisi Bhaskar¹,Mahato J. C.¹,Srihari V.²,Halder Rumu³,Dev B. N.¹

Affiliation:

1. Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India

2. High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India

3. Materials Science Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India

Funder

Department of Science and Technology, Ministry of Science and Technology (DST)

Council of Scientific and Industrial Research (CSIR)

Department of Atomic Energy, Government of India (DAE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963872

Reference50 articles.

1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

2. Shape transition in growth of strained islands: Spontaneous formation of quantum wires

3. Shape transition in the epitaxial growth of gold silicide in Au thin films on Si(111)

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