Initial stages of the epitaxial growth of Pr2O3 on Si(111) studied by LEED and STM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Epitaxial growth of praseodymium oxide on silicon
2. Pulsed laser deposition of epitaxial silicon/h‐Pr2O3/silicon heterostructures
3. Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing
4. N. Jeutter, A. Stierle, A. Sidorenko, W. Moritz, to be submitted.
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1. A well-structured metastable ceria surface;Applied Physics Letters;2014-02-24
2. Temperature-Dependent Reduction of Epitaxial Ce1–xPrxO2−δ (x = 0–1) Thin Films on Si(111): A Combined Temperature-Programmed Desorption, X-ray Diffraction, X-ray Photoelectron Spectroscopy, and Raman Study;The Journal of Physical Chemistry C;2013-11-13
3. Surface morphology of ultrathin hex-Pr2O3films on Si(1 1 1);Journal of Physics D: Applied Physics;2013-06-25
4. Stoichiometry–structure correlation of epitaxial Ce1−xPrxO2−δ (x=0−1) thin films on Si(111);Journal of Crystal Growth;2012-09
5. Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions;Surface Science;2010-08
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