Inversion Domain and Stacking Mismatch Boundaries in GaN
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.103/fulltext
Reference15 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
4. Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy
5. Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy
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