Normal Displacements on a Reconstructed Silicon (111) Surface: An X-Ray-Standing-Wave Study
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.57.3077/fulltext
Reference23 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
2. Tests of Si(111)−7 × 7 structural models by comparison with transmission electron diffraction patterns
3. X-ray diffraction evidence of adatoms in the Si(111)7×7 reconstructed surface
4. The Tunneling Microscope: A New Look at the Atomic World
5. Surface Electronic Structure of Si (111)-(7×7) Resolved in Real Space
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1. Photoelectron Emission Excited by a Hard X-ray Standing Wave;Springer Series in Surface Sciences;2015-12-27
2. Surface Structure Analysis with X-Ray Standing Waves;Surface Science Techniques;2013
3. C60 submonolayers on the Si(111)-(7×7) surface: Does a mixture of physisorbed and chemisorbed states exist?;Surface Science;2009-09
4. Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112);Journal of Physics: Condensed Matter;2009-07-07
5. Surface structure determination using x-ray standing waves;Reports on Progress in Physics;2005-03-09
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