Tests of Si(111)−7 × 7 structural models by comparison with transmission electron diffraction patterns
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. High energy transmission electron diffraction and imaging studies of the silicon (111) 7 × 7 surface structure
2. "Surface Dislocation" Process for Surface Reconstruction and Its Application to the Silicon (111) 7×7 Reconstruction
3. Surface stacking sequence and (7 × 7) reconstruction at Si(111) surfaces
4. Structure of Si(111)−7 × 7. II
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1. Electronic structure of semiconductor interfaces;International Journal of Quantum Chemistry;2009-06-19
2. Dynamical analysis of a RHEED pattern from the Si(111)-7 × 7 surface;Surface Science;1994-07
3. Reflection high-energy electron-diffraction analysis of the Si(111)-(7×7) reconstruction;Physical Review B;1994-06-15
4. Direct observation of A 7 × 7 superstructure at the amorphous Si/Si(111) Interface by cross-sectional high resolution transmission electron microscopy;Surface Science;1989-12
5. Direct observation of a 7 × 7 superstructure at the amorphous Si/Si(111) interface by cross-sectional high resolution transmission electron microscopy;Surface Science Letters;1989-12
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