Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112)
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/21/i=31/a=314020/pdf
Reference44 articles.
1. High Electron Mobilities in Surfactant-Grown Germanium on Silicon Substrates
2. Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures
3. Ge/Si Heterojunction Photodiodes Fabricated by Wafer Bonding
4. Nucleation, growth, and deformation of one-dimensional Ge nanostructures on the Si(5512)-2×1 surface
5. Thin epitaxial Ge−Si(111) films: Study and control of morphology
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ga and In adsorption on Si(112): Adsorption sites and superstructure;Physical Review B;2017-03-31
2. Mazes and meso-islands: Impact of Ag preadsorption on Ge growth on Si(111);Physical Review B;2016-12-08
3. Applications in Surface Science;Surface Microscopy with Low Energy Electrons;2014
4. Ga induced 2D superstructural phase diagram on trenched Si(5 5 12) surface;Surface Science;2012-07
5. In adsorption on Si(112) and its impact on Ge growth;IBM Journal of Research and Development;2011-07
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