Direct Determination of the Interaction between Vacancies on InP(110) Surfaces
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.76.2089/fulltext
Reference19 articles.
1. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
2. Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces
3. Geometry and electronic structure of the arsenic vacancy on GaAs(110)
4. Indium and phosphorus vacancies and antisites in InP
5. Theory of relative native- and impurity-defect abundances in compound semiconductors and the factors that influence them
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