Arsenic-terminated Ge(111): An ideal 1×1 surface
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.55.533/fulltext
Reference11 articles.
1. Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)
2. Electronic surface states on the relaxed (111) surface of Ge
3. Electronic structure of Ge(111) and Ge(111): H from angle-resolved-photoemission measurements
4. Study of Electronic Structures of Ge(111)7 ×7-Sn and Ge(111) “2 ×8” Surfaces by Angle-Resolved UPS
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3. Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness;Journal of Applied Physics;2018-04-28
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