Electronic surface states on the relaxed (111) surface of Ge-Reference-Cited by-同舟云学术

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Electronic surface states on the relaxed (111) surface of Ge

Published:1977-03-15 Issue:6 Volume:15 Page:3236-3242
ISSN:0556-2805
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Chelikowsky James R.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.15.3236/fulltext

Reference27 articles.

1. Self-Consistent Pseudopotential Calculations on Si(111) Unreconstructed and (2×1) Reconstructed Surfaces

2. Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures

3. New Method of Calculating Bulk and Surface States in Thin Films

4. Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pseudopotential methods in condensed matter applications;Computer Physics Reports;1989-04

2. Surface band dispersion of Ge(111)c(2×8) and Ge(111):As 1×1;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1986-05

3. Arsenic-terminated Ge(111): An ideal 1×1 surface;Physical Review Letters;1985-07-29

4. Density Functionals and the Description of Metal Surfaces;Density Functional Methods In Physics;1985

5. Models for Si (111) Surface upon Ge Adsorption;The Structure of Surfaces;1985

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