Diluted II-VI Oxide Semiconductors with Multiple Band Gaps-Reference-Cited by-同舟云学术

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Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

Published:2003-12-11 Issue:24 Volume:91 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Yu K. M.,Walukiewicz W.,Wu J.,Shan W.,Beeman J. W.,Scarpulla M. A.,Dubon O. D.,Becla P.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.91.246403/fulltext

Reference22 articles.

1. Current status of research and development of III N V semiconductor alloys

2. Band anticrossing in group II-Ox–VI1−x highly mismatched alloys: Cd1−xMnyOxTe1−x quaternaries synthesized by O ion implantation

3. Band Anticrossing in GaInNAs Alloys

4. Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries

5. Band anticrossing in highly mismatched III V semiconductor alloys

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