Infrared study of hydrogen adsorbed onc(2×8) and (2×6) GaAs(100)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.250/fulltext
Reference23 articles.
1. Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces
2. Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structures
3. High-resolution electron-energy-loss spectroscopy studies of GaAs (100) surfaces
4. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
5. MBE growth on vicinal GaAs(001) surfaces studied by scanning tunneling microscopy
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