Reconstructions of the As-Terminated GaAs(001) Surface Exposed to Atomic Hydrogen
Author:
Affiliation:
1. Institut für Physik and Institut für Mikro- und Nanotechnologien (IMN), Technische Universität Ilmenau, 98693 Ilmenau, Germany
2. Lehrstuhl für Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
Funder
Technische Universit?t Ilmenau
Deutsche Forschungsgemeinschaft
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c06019
Reference24 articles.
1. III-V compounds for solar cell applications
2. Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
3. First-principles calculations of molecular- and atomic-hydrogen reactions on As-terminated GaAs(100) surfaces
4. Geometry and electronic structure of GaAs(001)(2×4) reconstructions
5. Hydrogen-bridge bonding on semiconductor surfaces: Density-functional calculations
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