Quantum Chemical Study of Adsorption and Dissociation of H2S on the Gallium-Rich GaAs (001)-4 × 2 Surface
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp057267a
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