Dielectric Anisotropy of the GaP/Si(001) Interface from First-Principles Theory
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.118.237403/fulltext
Reference39 articles.
1. Polar-on-nonpolar epitaxy
2. Comparison of GaAsP solar cells on GaP and GaP/Si
3. Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
4. In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces
5. Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)
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1. Determination of III-V/Si absolute interface energies: Impact on wetting properties;Physical Review B;2023-08-21
2. Correlation of early-stage growth process conditions with dislocation evolution in MOCVD-based GaP/Si heteroepitaxy;Journal of Crystal Growth;2021-10
3. Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface;Applied Physics Letters;2020-08-24
4. Electronic structure of GaP/Si (001) heterojunctions and the role of hydrogen passivation;Progress in Photovoltaics: Research and Applications;2019-05-27
5. The manipulation of the physical properties of some typical zinc-blende semiconductors by the electric field;Modern Physics Letters B;2019-03-30
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