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Photoexcited Muon Spin Spectroscopy: A New Method for Measuring Excess Carrier Lifetime in Bulk Silicon

  • Published:2017-11-29 Issue:22 Volume:119 Page:
  • ISSN:0031-9007
  • Container-title:Physical Review Letters
  • language:en
  • Short-container-title:Phys. Rev. Lett.

Author:

Yokoyama K.,Lord J. S.,Miao J.,Murahari P.,Drew A. J.

Funder

FP7 Ideas: European Research Council

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and annihilation of bulk recombination-active defects induced by muon irradiation of crystalline silicon;Journal of Applied Physics;2024-08-07

2. Muonium state exchange dynamics in n -type GaAs;Physical Review Research;2024-08-06

3. Nonadiabatic Molecular Dynamics with Non-Condon Effect of Charge Carrier Dynamics;Journal of the American Chemical Society;2023-12-21

4. Development of transient μSR method for high-flux pulsed muons;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-11

5. Single-pulse terahertz spectroscopy monitoring sub-millisecond time dynamics at a rate of 50 kHz;Nature Communications;2023-05-05
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