Effect of surface on defect creation by self-ion bombardment of Si(001)-Reference-Cited by-同舟云学术

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Effect of surface on defect creation by self-ion bombardment of Si(001)

Published:1998-10-15 Issue:15 Volume:58 Page:9907-9915
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tarus J.,Nordlund K.,Kuronen A.,Keinonen J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.9907/fulltext

Reference61 articles.

1. Incorporation of accelerated low‐energy (50–500 eV) In+ions in Si(100) films during growth by molecular‐beam epitaxy

2. Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ion irradiation

3. Chemical sputtering of Si related to roughness formation of a Cl‐passivated Si surface

4. CMOS scaling into the 21st century: 0.1 µm and beyond

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