Effects of band offset and nonparabolicity on the effective mass of two-dimensional electron gases in modulation-δ-dopedGa0.47In0.53As-based heterostructures-Reference-Cited by-同舟云学术

Effects of band offset and nonparabolicity on the effective mass of two-dimensional electron gases in modulation-δ-dopedGa0.47In0.53As-based heterostructures

Published:1997-02-15 Issue:8 Volume:55 Page:5235-5238
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Dai Y. T.,Chen Y. F.,Lo I.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.5235/fulltext

Reference26 articles.

1. In‐plane effective masses and quantum scattering times of electrons in narrow modulation‐doped InGaAs/InP quantum wells

2. Electrochemical capacitance‐voltage analysis of delta‐doped pseudomorphic high electron mobility transistor material

3. Second subband population in δ‐doped Al0.48In0.52As/Ga0.47In0.53As heterostructures

4. Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance

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1. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor;Journal of Applied Physics;2009-06

2. Tunable far-IR detectors/filters based on plasmons in two-dimensional electron gases in InGaAs/InP heterostructures;SPIE Proceedings;2007-09-13

3. Magnetotransport in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions: in-plane effective mass, quantum and transport mobilities of 2D electrons;Superlattices and Microstructures;2001-02

4. Feasibility of optically detected cyclotron resonance to study electron mobility in ultrapure GaAs;Physical Review B;2000-09-15

5. Two-dimensional electron gas and persistent photoconductivity inAlxGa1−xN/GaNheterostructures;Physical Review B;1998-11-15