Ab initiostructural study of the silicon/nickel disilicide interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.2927/fulltext
Reference23 articles.
1. Structural properties of epitaxialNiSi2on Si(111) investigated with x-ray standing waves
2. Geometric structure of the NiSi2Si(111) interface: An X-ray standing-wave analysis
3. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
4. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
5. Schottky barrier height measurements of epitaxial NiSi2 on Si
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1. Quantitative first-principles theory of interface absorption in multilayer heterostructures;Applied Physics Letters;2015-08-31
2. Structural and electronic properties of thin fluorite-structure NiSi2, CoSi2and FeSi2interfaces and precipitates in Si;physica status solidi (a);2005-04
3. Schottky barrier at the Al/Si(111) doped and double-doped interfaces: a local-density cluster study;Superlattices and Microstructures;1998-07
4. First-principles study of the stability of theNiSi2/Si(111)interface;Physical Review B;1998-04-15
5. Influence of P, As and Ga doping on electronic structure of interface;Vacuum;1997-03
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