Structural properties of epitaxialNiSi2on Si(111) investigated with x-ray standing waves
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.10254/fulltext
Reference23 articles.
1. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
2. Atomic structure of the NiSi2/(111)Si interface
3. Real-space determination of atomic structure and bond relaxation at theNiSi2-Si(111) interface
4. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
5. Schottky barrier height measurements of type‐A and type‐B NiSi2 epilayers on Si
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