Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes-Reference-Cited by-同舟云学术

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

Published:1997-06-01 Issue:21 Volume:55 Page:14279-14289
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tang Meijie,Colombo L.,Zhu Jing,Diaz de la Rubia T.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.14279/fulltext

Reference39 articles.

1. Ion Implantation: Basics to Device Fabrication

2. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

3. Point defects and dopant diffusion in silicon

4. Mechanisms of equilibrium and nonequilibrium diffusion of dopants in silicon

5. First-principles calculations of self-diffusion constants in silicon

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