Metastable state of theEL2 defect in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.12546/fulltext
Reference27 articles.
1. Properties of theEL2 level inGaAs1−xPx
2. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
3. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
4. Metastability of the Isolated Arsenic-Antisite Defect in GaAs
5. Metastable State ofEL2in GaAs
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1. Metastable Defects in Compound Semiconductors;Solid State Phenomena;1999-10
2. Origin of the magnetic circular dichroism of absorption of the arsenic antisite in GaAs andAlxGa1−xAs;Physical Review B;1998-02-15
3. Detection and Identification of the EL2 Metastable in GaAs;Materials Science Forum;1997-12
4. Symmetry determination of theEL2 defect by numerical fitting of capacitance transients under uniaxial stress;Physical Review B;1994-01-15
5. Vibronic levels of theEL2 center under uniaxial stress;Physical Review B;1992-12-15
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