Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.2406/fulltext
Reference35 articles.
1. Recent trends in III–V strained layer research
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3. Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate
4. Ultralow threshold multiquantum well InGaAs lasers
5. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
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