Well-width dependence of light-hole exciton dephasing in GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.4624/fulltext
Reference24 articles.
1. Temperature dependence of exciton lifetimes in GaAs/AlxGa1−xAs single quantum wells
2. Well-width and aluminum-concentration dependence of the exciton binding energies in GaAs/AlxGa1−xAs quantum wells
3. Effect of band hybridization on exciton states in GaAs-AlxGa1−xAs quantum wells
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3. Separating Homogeneous and Inhomogeneous Line Widths of Heavy- and Light-Hole Excitons in Weakly Disordered Semiconductor Quantum Wells;The Journal of Physical Chemistry B;2011-03-09
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