Separating Homogeneous and Inhomogeneous Line Widths of Heavy- and Light-Hole Excitons in Weakly Disordered Semiconductor Quantum Wells-Reference-Cited by-同舟云学术

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Separating Homogeneous and Inhomogeneous Line Widths of Heavy- and Light-Hole Excitons in Weakly Disordered Semiconductor Quantum Wells

Published:2011-03-09 Issue:18 Volume:115 Page:5365-5371
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Bristow Alan D.¹,Zhang Tianhao¹²,Siemens Mark E.¹,Cundiff Steven T.¹²,Mirin R. P.³

Affiliation:

1. JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440, United States

2. Department of Physics, University of Colorado, Boulder, Colorado 80309-0390, United States

3. National Institute of Standards and Technology, Boulder, Colorado 80305, United States

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp109408s

Reference68 articles.

1. Semiconductor Optics

2. Investigation of InGaAs-InP quantum wells by optical spectroscopy

3. ‘‘Spin’’-flip scattering of holes in semiconductor quantum wells

4. Femtosecond spectroscopy in semiconductors: a key to coherences, correlations and quantum kinetics

5. Coherent spectroscopy of semiconductors

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