Well-width and aluminum-concentration dependence of the exciton binding energies in GaAs/AlxGa1−xAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.15755/fulltext
Reference32 articles.
1. Observation of the excited level of excitons in GaAs quantum wells
2. Exciton binding energy in quantum wells
3. Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structures
4. Energy levels of Wannier excitons inGaAs−Ga1−xAlxAsquantum-well structures
5. A Wannier Exciton in a Quantum Well: Subband Dependence
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