Using superlattice ordering to reduce the band gap of random (In,Ga)As/InP alloys to a target value via the inverse band structure approach
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.78.161302/fulltext
Reference17 articles.
1. Silicon, germanium and silicon/germanium photocells for thermophotovoltaics applications
2. Quaternary InGaAsSb Thermophotovoltaic Diodes
3. InP-based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermophotovoltaic applications
4. Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of composition
5. Photoluminescence and Lattice Mismatch in InGaAs/InP
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