InP-based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermophotovoltaic applications-Reference-Cited by-同舟云学术

InP-based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermophotovoltaic applications

Published:2006 Issue:11 Volume:100 Page:114510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Rohr Carsten,Abbott Paul,Ballard Ian,Connolly James P.,Barnham Keith W. J.,Mazzer Massimo,Button Chris,Nasi Lucia,Hill Geoff,Roberts John S.,Clarke Graham,Ginige Ravin

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference18 articles.

1. A new approach to high‐efficiency multi‐band‐gap solar cells

2. Strain-balanced GaAsP/InGaAs quantum well solar cells

3. Strain-Balanced Criteria for Multiple Quantum Well Structures and Its Signature in X-ray Rocking Curves

4. InGaAs/InGaAs strain-compensated quantum well cells for thermophotovoltaic applications

5. A review of progress in thermophotovoltaic generation of electricityfnafnaI began writing this paper immediately after the Third nrel Conference on Thermophotovoltaic Genertion of materials, devices, and systems; substantial gains in fundamental understanding and performance of the quaternary alloy GaInAsSb; the introduction of new radiator concepts; and more attention being paid to modeling of both real and conceptual systems. There was also further evidence of interest in non-military applications, particularly from the European and Japanese attendees.

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