Anomalously large negative differential resistance due toΓ−Xresonances in type-I GaAs/AlAs superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.6432/fulltext
Reference19 articles.
1. Γ-Xmixing effects on pseudodirect exciton transitions in GaAs/AlAs type-II superlattices
2. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
3. Experimental study of the Γ-Xelectron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structures
4. New formation mechanism of electric field domain due to Γ‐Xsequential tunneling in GaAs/AlAs superlattices
5. Negative differential conductance frequency resonances inXvalley superlattice minibands
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1. Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications;Heliyon;2023-05
2. Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes;Scientific Reports;2016-07-28
3. Ab InitioCalculations of the Anisotropic Dielectric Tensor ofGaAs/AlAsSuperlattices;Physical Review Letters;2002-11-04
4. Optically induced electric-field domains by bound-to-continuum transitions inn-type multiple quantum wells;Physical Review B;1998-06-15
5. Avalanche breakdown mechanism originating from Γ–X–Γ transfer in GaAs/AlAs superlattices;Applied Physics Letters;1997-11-10
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