New formation mechanism of electric field domain due to Γ‐Xsequential tunneling in GaAs/AlAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112124
Reference17 articles.
1. Instabilities of Current in III–V Semiconductors
2. Instabilities of Current in III–V Semiconductors
3. Observation by resonant tunneling of high-energy states in GaAs-Ga1−xAlxAs quantum wells
4. Tunneling through indirect-gap semiconductor barriers
5. New Transport Phenomenon in a Semiconductor "Superlattice"
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2. Chaos synchronization in networks of semiconductor superlattices;EPL (Europhysics Letters);2015-11-01
3. Noise-enhanced spontaneous chaos in semiconductor superlattices at room temperature;EPL (Europhysics Letters);2014-07-25
4. Fast Physical Random-Number Generation Based on Room-Temperature Chaotic Oscillations in Weakly Coupled Superlattices;Physical Review Letters;2013-07-25
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