Optically detected magnetic resonance study of antisite-to-acceptor and related recombination processes in as-grown InP:Zn
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.13227/fulltext
Reference18 articles.
1. Electron paramagnetic resonance identification of the phosphorus antisite in electron‐irradiated InP
2. Optical detection of the PInantisite resonances in InP
3. Anti-site centres in e-irradiated InP:Zn
4. On the prospect of as-grown semi-insulating InP: ODMR of the PInantisite
5. Applications of electron paramagnetic resonance and optically-detected magnetic resonance to InP materials
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1. Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1−xBixdilute bismide alloys;Journal of Physics D: Applied Physics;2016-02-17
2. Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy;Solid-State Electronics;1998-04
3. Optically detected magnetic-resonance study of Zn-doped InP: Nuclear-spin polarization atPInantisites;Physical Review B;1994-03-15
4. DifferentPInantisites inn- andp-type InP;Physical Review B;1993-12-15
5. Electronic properties of low-temperature InP;Journal of Electronic Materials;1993-12
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