Optical detection of the PInantisite resonances in InP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/17/i=29/a=007/pdf
Reference9 articles.
1. Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductors
2. Identification of EL2 in GaAs as the AsGaantisite centre
3. ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2
4. Electron paramagnetic resonance identification of the phosphorus antisite in electron‐irradiated InP
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1. Intrinsic Point Defects in Semiconductors 1999;Materials Science and Technology;2013-02-15
2. Vacancies and negative ions in as-grown and ion-bombarded p-InP(Zn) observed by positron annihilation;Semiconductor Science and Technology;1999-01-01
3. Thermally stimulated current study of electron-irradiated semi-insulating Fe-doped InP;Solid State Communications;1996-11
4. Observation of In antisite and Fe-related defects in 30-MeV electron-irradiated Fe-doped semi-insulating InP;Physical Review B;1995-11-15
5. Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP;Materials Science Forum;1995-11
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